XN1C301

Composite Transistors XN1C301 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For general amplification 0.65±0.15 5 0.95 2.8 -0.3 +0.2 +0.25 1.5 -0.05 0.65±0.15 1 2.9 -0.05 q 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 s Basic Part Number of Element q 1.1 -0.1 +0.2 0.8 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings –60 –50 –7 –100 –200 60 50 7 100 200 300 150 –55 to +150 Unit V V V mA mA V V V mA mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0 to 0.1 2SB709A+2SD601A 0.1 to 0.3 4 : Base (Tr1) Emitter (Tr2) 5 : Emitter (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Marking Symbol: 4R Internal Connection 5 4 3 2 Tr1 1 Tr2 +0.1 q Two elements incorporated into one package. (Tr1 base is connected to Tr2 emitter.) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 1.45±0.1 s Features 1 Composite Transistors XN1C301 (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCB = –20V, IE = 0 VCE = –...