Composite Transistors
XN1501
Silicon NPN epitaxial planer transistor
Unit: mm
For general amplification
2.8 -0.3 0.65±...
Composite
Transistors
XN1501
Silicon
NPN epitaxial planer
transistor
Unit: mm
For general amplification
2.8 -0.3 0.65±0.15
+0.2 +0.25
1.5 -0.05 5
0.65±0.15 1
0.95
2.9 -0.05
q
q
Two elements incorporated into one package. (Emitter-coupled
transistors) Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
4
0.95
3
2 0.3 -0.05 0.4±0.2 0.16 -0.06
+0.1
1.1 -0.1
q
2SD601A × 2 elements
0.8
s Basic Part Number of Element
+0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings 60 50 7 100 200 300 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C
1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2)
0 to 0.1
0.1 to 0.3
4 : Emitter 5 : Base (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin)
Marking Symbol: 5R Internal Connection
5 4 3 2 Tr1 1
Tr2
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
*1
(Ta=25˚C)
Symbol VCBO VCEO VEBO ICBO ICEO hFE hFE (small/large)*1 VCE(sat) fT Cob Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCB = 20V, I...