XN121E

Composite Transistors XN121E Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN121E × 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings Parameter Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Collector to base voltage Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 300 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0 to 0.1 0.1 to 0.3 4 : Emitter 5 : Base (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Marking Symbol: AQ Internal Connection 5 4 3 2 Tr1 1 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency *1 (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL R1 R1/R2 fT VCB = 10V, IE = –2mA, f = 200MHz Conditions IC =...