Composite Transistors
XN09D57
Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD)
For DC-DC conv...
Composite
Transistors
XN09D57
Silicon
PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD)
For DC-DC converter ■ Features
Two elements incorporated into one package (Tr + SBD) Reduction of the mounting area and assembly cost by one half Low collector-emitter saturation voltage VCE(sat)
0.50+0.10 –0.05 0.30+0.10 –0.05 6 5 4
Unit: mm
0.16+0.10 –0.06
1.50+0.25 –0.05
2.8+0.2 –0.3
1
2
3
■ Basic Part Number
XN9D57 + MA3XD11
(0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Display at No.1 lead 10°
1.1+0.2 –0.1
Tr
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current
VCBO VCEO VEBO IC ICP VR VRRM IF(AV) IFSM PT Tj Tstg
−15 −15 −5 −2.5 −10 20 25 1 2 600 125 −55 to +125
V V V A A V V A A
1 2
1: Emitter 2: Base 3: Anode
0 to 0.1
Parameter
Symbol
Rating
Unit
4: Collector (Cathode) 5: Collector (Cathode) 6: Collector (Cathode) Mini6-G1 Package
Marking Symbol: EW Internal Connection
6 5 4
SBD
Reverse voltage Repetitive peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current
Overall
Total power dissipation * Junction temperature Storage temperature
mW °C °C
Note) *: Measuring on ceramic substrate at 15 mm × 15 mm × 0.6 mm
■ Electrical Characteristics Ta = 25°C ± 3°C
Tr
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff curre...