IR2105

Data Sheet No. PD60139J IR2105 HALF BRIDGE DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout 5V Schmitt-triggered input logic Cross-conduction prevention logic Internally set deadtime High side output in phase with input Match propagation delay for both channels Product Summary VOFFSET IO+/VOUT ton/off (typ.) Deadtime (typ.) 600V max. 130 mA / 270 mA 10 - 20V 680 & 150 ns 520 ns Packages Description The IR2105 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts. 8 Lead PDIP 8 Lead SOIC Typical Connection up to 600V VCC V CC IN VB HO VS TO LOAD IN COM LO IR2105 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted...