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IPP10N03L Dataheets PDF



Part Number IPP10N03L
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description OptiMOS Buck converter series
Datasheet IPP10N03L DatasheetIPP10N03L Datasheet (PDF)

IPP10N03L IPB10N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 8.9 73 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converters Type IPP10N03L IPB10N03L Package Ordering Code Marking 10N03L 10N03L P- TO220 -3-1 Q67042-S4040 P- TO.

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IPP10N03L IPB10N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 8.9 73 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converters Type IPP10N03L IPB10N03L Package Ordering Code Marking 10N03L 10N03L P- TO220 -3-1 Q67042-S4040 P- TO263 -3-2 Q67040-S4346 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25°C Value 73 63 Unit A ID Pulsed drain current TC=25°C I D puls EAS EAR dv/dt VGS Ptot T j , Tstg 292 25 10 6 ±20 107 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=30A, VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=73A, VDS=24, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-01-17 IPP10N03L IPB10N03L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA - Values typ. 0.9 max. 1.4 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, I D=1mA Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = VDS ID=60µA Zero gate voltage drain current V DS=30V, V GS=0V, Tj=25°C V DS=30V, V GS=0V, Tj=175°C µA 0.01 10 1 1 100 100 nA mΩ 9.9 9.5 6.8 6.5 13.4 13.1 9.2 8.9 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, ID=36A V GS=4.5V, ID=36A, SMD version Drain-source on-state resistance4) V GS=10V, ID=36A V GS=10V, ID=36A, SMD version 1Current limited by bondwire ; with an R thJC = 1.4K/W the chip is able to carry I D= 88A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2 2003-01-17 IPP10N03L IPB10N03L Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Output charge Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, I F=73A VR =15V, IF=lS, diF /dt=100A/µs Symbol Conditions min. Values typ. 63 1290 500 130 1.4 7.7 20 31.5 19 max. - Unit g fs Ciss Coss Crss RG t d(on) tr t d(off) tf V DS≥2*I D*RDS(on)max, ID=63A V GS=0V, V DS=25V, f=1MHz 32 - S 1710 pF 670 190 30 47.3 28.5 Ω 11.6 ns V DD=15V, VGS=10V, ID=18A, RG=4.7Ω Q gs Q gd Qg Q oss V DD=15V, ID=36A - 4 10.6 19 18.2 3.6 5 13.3 23.8 22.8 - nC V DD=15V, ID=36A, V GS=0 to 5V V DS=15V, ID=36A, V GS=0V nC V V(plateau) V DD=15V, ID=36A IS TC=25°C - 0.96 32.9 33 73 292 A 1.28 V 41.2 ns 41 nC Page 3 2003-01-17 IPP10N03L IPB10N03L 1 Power dissipation Ptot = f (TC) IPP10N03L 2 Drain current ID = f (TC) parameter: V GS≥ 10 V IPP10N03L 120 80 W A 100 90 60 P tot ID 20 40 60 80 100 120 140 160 °C 190 80 70 60 50 50 40 30 40 30 20 10 10 0 0 0 0 20 40 60 80 100 120 140 160 °C 190 20 TC TC 3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TC = 25 °C 10 3 IPP10N03L 4 Max. transient thermal impedance ZthJC = f (t p) parameter : D = t p/T 10 1 IPP10N03L K/W A tp = 1.8µs 10 0 /I D V 10 2 ID = 10 µs ZthJC DS R DS (on ) 10 -1 100 µs D = 0.50 10 10 1 1 ms -2 0.20 0.10 single pulse 0.05 0.02 0.01 10 ms 10 -3 DC 10 0 -1 10 10 0 10 1 V 10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-01-17 IPP10N03L IPB10N03L 5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 170 IPP10N03L Ptot = 107W 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: V GS IPP10N03L 0.032 b c d e VGS [V] a 3.0 b 3.5 4.0 4.5 5.0 5.5 6.0 10.0 A 140 h g f Ω e c d e 120 RDS(on) 0.024 ID 0.02 100 80 f d g h 0.016 60 0.012 c f 40 b 0.008 VGS [V] = b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g h 6.0 10.0 g h 20 a 0.004 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0 20 40 60 80 100 A 140 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 140 8 Typ. forward transconduct.


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