UNISONIC TECHNOLOGIES CO., LTD
D965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT NPN TRANSIS...
UNISONIC TECHNOLOGIES CO., LTD
D965SS / D965ASS
NPN EPITAXIAL SILICON
TRANSISTOR
LOW VOLTAGE HIGH CURRENT
NPN TRANSISTOR
FEATURES
* Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V
APPLICATIONS
* Audio amplifier * Flash unit of camera * Switching circuit
ORDERING INFORMATION
Order Number D965SSG-x-AE3-R D965ASSG-x-AE3-R
Package
SOT-23 SOT-23
Pin Assignment 123 EBC EBC
Packing
Tape Reel Tape Reel
MARKING
UTC D965SS
UTC D965ASS D65AG
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., LTD
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QW-R206-016.D
D965SS / D965ASS
NPN EPITAXIAL SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER Collector-Base voltage
Collector-Emitter Voltage
Emitter-Base Voltage Collector dissipation(Ta=25C) Collector current Junction Temperature Storage Temperature
D965SS D965ASS
SYMBOL VCBO
VCEO
VEBO Pc IC TJ TSTG
RATINGS 40
20 30 7 750 5 150 -65 ~ +150
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown D965SS
voltage
D965ASS
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Current gain bandwidth product Output capacitance
SYMBOL
TEST CONDITIONS
BVCBO IC=100μA, IE=0
BVCEO IC=1mA, IB=0
BVEBO ICBO IEBO hFE1 hFE2
hFE3 VCE(SAT)
fT Cob
IC =0, IE=10μA VCB=10V, IE=0 VEB=7V, IC=0 VCE=2V, IC=1mA
VCE=2V, ...