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BR9080AF-W Dataheets PDF



Part Number BR9080AF-W
Manufacturers Rohm
Logo Rohm
Description 8k/ 16k bit EEPROMs for direct connection to serial ports
Datasheet BR9080AF-W DatasheetBR9080AF-W Datasheet (PDF)

Memory ICs BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W / BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W 8k, 16k bit EEPROMs for direct connection to serial ports BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W / BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W The BR9080A and BR9016A series are serial EEPROMs that can be connected directly to a serial port and can be erased and written electrically. Writing and reading is performed in word units, using four types of operation commands. Communication occurs though.

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Memory ICs BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W / BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W 8k, 16k bit EEPROMs for direct connection to serial ports BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W / BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W The BR9080A and BR9016A series are serial EEPROMs that can be connected directly to a serial port and can be erased and written electrically. Writing and reading is performed in word units, using four types of operation commands. Communication occurs though CS, SK, DI, and DO pins, WC pin control is used to initiate a write disabled state, enabling these EEPROMs to be used as one-time ROMs. During writing, operation is checked via the internal status check. !Applications Movie, camera, cordless telephones, car stereos, VCRs, TVs, DIP switches, and other battery-powered equipment requiring low voltage and low current !Features 1) BR9080AF-W / ARFV-W / ARFVM-W (8k bit) : 512 words ×16 bits BR9016AF-W / ARFV-W / ARFVM-W (16k bit) : 1024 words × 16bits 2) Single power supply operation 3) Serial data input and output 4) Automatic erase-before-write 5) Low current consumption Active (5V) : 5mA (max.) Standby (5V) : 3µA (max.) 6) Noise filter built into SK pin 7) Write protection when VCC is low Inhibition on inadvertant write with the WC pin. 8) SOP8 / SSOP-B8 / MSOP8 9) High reliability CMOS process 10) 100,000 ERASE / WRITE cycles 11) 10 years Data Retention 1/12 Memory ICs !Block diagram BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W / BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W INSTRUCTION DECODE R/B CS CONTROL CLOCK GENERATION DETECT SUPPLY VOLTAGE WRITE DISABLE HIGH VOLTAGE GENERATOR SK WC DI INSTRACTION REGISTER ADD BUFFER ∗ 9bit ADD DECORDER ∗ 9bit ∗ 8,192 bit EEPROM DO DATA REGISTER 16bit R/W AMPS 16bit ∗ BR9016A is 10bit, 16,384bit BR9080A is 9bit, 8,192bit !Pin descriptions VCC R/B WC GND WC GND DO DI VCC R / B WC GND CS SK DI DO R/B VCC CS SK CS SK DI DO BR9080ARFVM : MSOP8 BR9016ARFVM BR9080AF : SOP8 BR9016AF Fig.1 BR9080ARFV : SSOP-B8 BR9016ARFV Pin No. MSOP / SSOP 1 2 3 4 5 6 7 8 SOP 3 4 5 6 7 8 1 2 Pin name CS SK DI DO GND WC R/B VCC Chip Select Control Serial Data Clock Input Function Op code, address, Serial Data Input Serial Data Output Ground 0V Write Control Input READY / BUSY Output Power supply 2/12 Memory ICs BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W / BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W Symbol VCC Limits −0.3∼+7.0 SOP8 450∗1 300∗2 310∗3 °C °C V mW Unit V !Absolute maximum ratings (Ta=25°C) Parameter Supply voltage Power dissipation Pd SSOP-B8 MSOP8 Storage temperature Operation temperature Input voltage Tstg Topr − −65∼+125 −40∼+85 −0.3∼VCC+0.3 ∗1 Reduced by 4.5mW for each increase in Ta of 1°C over 25°C. ∗2 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C. ∗3 Reduced by 3.1mW for each increase in Ta of 1°C over 25°C. !Recommended operating conditions (Ta=25°C) Parameter Power supply voltage Input voltage WRITE READ VIN Symbol VCC Min. 2.7 2.7 0 Typ. − − − Max. 5.5 5.5 VCC Unit V V V 3/12 Memory ICs BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W / BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W !Electrical characteristics BR9080AF-W / ARFV-W / ARFVM-W, BR9016AF-W / ARFV-W / ARFVM-W : 5V (Unless otherwise noted, Ta=−40∼85°C, VCC=2.7V∼5.5V) Parameter Input low level voltage 1 Input high level voltage 1 Input low level voltage 2 Input high level voltage 2 Output low level voltage Output high level voltage Input leak current Output leak current Operating current Standby current SK frequency Symbol VIL1 VIH1 VIL2 VIH2 VOL VOH ILI ILO ICC1 ICC2 ISB fSK Min. − 0.7×VCC − 0.8×VCC 0 VCC−0.4 −1 −1 − − − − Typ. − − − − − − − − − − − − Max. 0.3×VCC − 0.2×VCC − 0.4 VCC 1 1 5 3 3 2 Unit V V V V V V µA µA mA mA µA MHz DI pin DI pin CS, SK, WC pin CS, SK, WC pin IOL=2.1mA IOH=−0.4mA VIN=0V∼VCC VOUT=0V∼VCC, CS=VCC fSK=2MHz tE / W=10ms (WRITE) fSK=2MHz (READ) CS / SK / DI / WC=VCC DO, R / B=OPEN − Conditions BR9080AF-W / ARFV-W / ARFVM-W, BR9016AF-W / ARFV-W / ARFVM-W : 3V (Unless otherwise noted, Ta=−40∼85°C, VCC=2.7V∼3.3V) Parameter Input low level voltage 1 Input high level voltage 1 Input low level voltage 2 Input high level voltage 2 Output low level voltage Output high level voltage Input leak current Output leak current Operating current Standby current SK frequency Symbol VIL1 VIH1 VIL2 VIH2 VOL VOH ILI ILO ICC1 ICC2 ISB fSK Min. − 0.7×VCC − 0.8×VCC 0 VCC−0.4 −1 −1 − − − − Typ. − − − − − − − − − − − − Max. 0.3×VCC − 0.2×VCC − 0.4 VCC 1 1 3 0.75 2 2 Unit V V V V V V µA µA mA mA µA MHz DI pin DI pin CS, SK, WC pin CS, SK, WC pin IOL=100µA IOH=−100µA VIN=0V∼VCC VOUT=0V∼VCC, CS=VCC fSK=2MHz tE / W=10ms (WRITE) fSK=2MHz (READ) CS / SK / DI / WC=VCC DO, R / B=OPEN − Conditions Not designed for radiation resistance 4/12 Memory ICs BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W / BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W !Operating timing characteristics BR9080AF-W / ARFV-W / ARFVM-W, BR9016AF-W / ARFV-W / ARFVM.


BR9016ARFVM-W BR9080AF-W BR9080ARFV-W


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