DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D067
BF585; BF587 NPN high-voltage transistors
Product specifi...
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D067
BF585; BF587
NPN high-voltage
transistors
Product specification Supersedes data of 1996 Dec 09 1999 Apr 21
Philips Semiconductors
Product specification
NPN high-voltage
transistors
FEATURES Low feedback capacitance. APPLICATIONS For use in video output stages of black and white and colour television receivers. DESCRIPTION
NPN transistors in a TO-202; SOT128B plastic package.
PNP complement: BF588. PINNING PIN 1 2 3 emitter collector base DESCRIPTION Fig.1
handbook, halfpage
BF585; BF587
2 3 1
1
2
3
MBH793
Simplified outline (TO-202; SOT128B) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF585 BF587 VCEO collector-emitter voltage BF585 BF587 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature in free air; Tamb ≤ 25 °C in free air; Tmb ≤ 25 °C open collector open base − − − − − − − − −65 − −65 300 350 5 100 200 100 1.6 5 +150 150 +150 V V V mA mA mA W W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 350 400 V V MIN. MAX. UNIT
1999 Apr 21
2
Philips Semiconductors
Product specification
NPN high-voltage
transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting bas...