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SB120-18

Sanyo Semicon Device

180V/ 12A Rectifier

Ordering number :EN2582A SB120-18 Schottky Barrier Diode (Twin Type · Cathode Common) 180V, 12A Rectifier Applications...


Sanyo Semicon Device

SB120-18

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Description
Ordering number :EN2582A SB120-18 Schottky Barrier Diode (Twin Type · Cathode Common) 180V, 12A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1160 [SB120-18] Features · Low forward voltage (VF max=0.85V). · Fast reverse recovery time (trr max=50ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. A:Anode C:Cathode SANYO:TO-3PB Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions Ratings –180 –190 Unit V V A A 50Hz, resistive load, Tc=102˚C 50Hz sine wave, 1 cycle 12 120 –55 to +125 –55 to +125 ˚C ˚C Electrical Characteristics Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr Rthj-c Conditions Ratings min –180 0.85 –1.0 50 1.1 typ max Unit V V mA ns IR=–5mA, Tj=25˚C* IF=5A, Tj=25˚C* VR=–90V, Tj=25˚C* IF=2A, Tj=25˚C*, –dIF/dt=10A/µs Junction-Case:Smoothed DC ˚C/W Note)*:Value per element Electrical Connection A:Anode C:Cathode SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31098HA (KT)/5248TA, TS No.2582-1/3 SB120-18 No.2582-2/3 SB120-18 No products desc...




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