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SB10W05Z

Sanyo Semicon Device

50V/ 1A Rectifier

Ordering number : EN3876A Schottky Barrier Diode (Twin Type · Cathode Common) SB10W05Z 50V, 1A Rectifier Applications ...


Sanyo Semicon Device

SB10W05Z

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Description
Ordering number : EN3876A Schottky Barrier Diode (Twin Type · Cathode Common) SB10W05Z 50V, 1A Rectifier Applications High frequency rectification (switching regulators, converters, choppers). Features Low forward voltage (VF max=0.55V). Fast reverse recovery time (trr max=10ns). Low switching noise. Low leakage current and high reliability due to highly reliable planar structure. Absolute Maximum Ratings at Ta=25°C (Value per element) Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM Io IFSM Tj Tstg 50 55 1 10 –55 to +125 –55 to +125 min 50 typ unit V V A A °C °C max 0.55 80 unit V V µA pF ns °C/W 50Hz sine wave, 1 cycle Electrical Characteristics at Ta=25°C (Value per element) Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF IR c trr Rthj-a IR=300µA IF=1A VR=25V VR=10V, f=1MHz IF=IR=100mA See specified Test Circuit. 52 10 75 trr Test Circuit Package Dimensions 1243A (unit : mm) Electrical Connection SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN O0797GI/42297YH (KOTO) 8-7461 No.3876-1/2 SB10W05Z Reverse Current, IR – mA Forward Current, IF – A Forward Voltage, VF – V Average Reverse Power Dissipation, PR(AV) – mW Average Forward Power Dissipation, PF(AV) – W Reverse Voltage...




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