SB0030-01A

Ordering number:EN2191A SB0030-01A Schottky Barrier Diode 10V, 30mA Detection Applications Features · Glass sleeve structure. · Detection efficiency : 70%. · Small size (Half the size of the DO-35 heretofore in use). Package Dimensions unit:mm 1153A [SB0030-01A] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Reverse Voltage Average Rectified Current Junction Temperature Storage Temperature Symbol VR IO Tj Tstg Conditions Electrical Characteristics at Ta = 25˚C Parameter Forward Current Reverse Current Capacitance Detection Efficiency Detection Efficiency Circuit Symbol IF VF=1.0V IR VR=6V C VR=1V, f=1MHz η f=40MHz Conditions C:Cahode A:Anode Ratings 10 30 100 –55 to +100 Unit V mA ˚C ˚C Ratings min typ 4.5 70 max 70 1.5 Unit mA µA pF % Unit (resistance : Ω, capacitance : F) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62098HA (KT)/1169TA/O236TA, TS No.2191-1/3 SB0030-01A No.2191-2/3 SB0030-01A No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELE...