Semiconductor
SBT5551
NPN Silicon Transistor
Descriptions
General purpose amplifier High voltage application
Features
high collector breakdown voltage : VCBO = 180V, VCEO = 160V Low collector saturation voltage : VCE(sat)=0.5V(MAX.) Complementary pair with SBT5401
Ordering Information
Type NO. SBT5551 Marking FNF Package Code SOT-23
Outline Di...
