Semiconductor
SBT2222A
NPN Silicon Transistor
Descriptions
• General purpose application • Switching application
Feat...
Semiconductor
SBT2222A
NPN Silicon
Transistor
Descriptions
General purpose application Switching application
Features
Low Leakage current Low collector saturation voltage enabling low voltage operation Complementary pair with MMBT2907A
Ordering Information
Type NO. MMBT2222A Marking 1P Package Code SOT-23
Outline Dimensions
2.3~2.5 1.2~1.4
unit : mm
1
1.90 Typ.
3 2
0.4 Typ. 0.45~0.60
0.2 Min.
1.12 Max.
0.094~0.174
2.8~3.0
PIN Connections 1. Base 2. Emitter 3. Collector
0.38
KST-2001-002
0~0.1
1
SBT2222A
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range * : Package mounted on 99.5% alumina 10×8×0.6mm
Ta=25°C
Symbol
VCBO VCEO VEBO IC PC* Tj Tstg
Ratings
75 40 5 600 350 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Delay time Rise time Storage time Fall Time
Ta=25°C
Symbol
BVCBO BVCEO BVEBO ICBO hFE VCE(sat) fT Cob td tr ts tf
Test Condition
IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=75V, IE=0 VCE=10V, IC=10mA IC=150mA, IB=15mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1MHz VCC=30Vdc, VBE(off)=0.5Vdc, IC=150mAdc, IB1=15mAdc VCC=30Vdc,IC=150...