Document
Semiconductor
SBC548
NPN Silicon Transistor
Descriptions
• General purpose application • Switching application
Features
• High voltage : VCEO=30V • Complementary pair with SBC558
Ordering Information
Type NO. SBC548 Marking SBC548 Package Code TO-92
Outline Dimensions
3.45±0.1 4.5±0.1 2.25±0.1
unit : mm
4.5±0.1
0.4±0.02
2.06±0.1
14.0±0.40
1.27 Typ. 2.54 Typ.
1 2 3
1.20±0.1
0.38
PIN Connections 1. Collector 2. Base 3. Emitter
KST-9026-000
1
SBC548
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
30 30 5 100 625 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Noise figure
(Ta=25°C)
Symbol
BVCEO VBE(ON) VBE(sat) VCE(sat) ICBO hFE fT Cob NF
*
Test Condition
IC=1mA, IB=0 VCE=5V, IC=2mA IC=100mA, IB=5mA IC=100mA, IB=5mA VCB=35V, IE=0 VCE=5V, IC=2mA VCE=5V, IC=10mA VCB=10V, IE=0, f=1MHz VCE=5V, IC=200µA, f=1KHz, Rg=2KΩ
Min. Typ. Max.
30 550 110 900 150 700 600 15 800 4.5 10
Unit
V mV mV mV nA MHz pF dB
* : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KST-9026-000
2
SBC548
Electrical Characteristic Curves
Fig. 1 PC-Ta Fig. 2 IC -VBE
Fig. 3 IC -VCE
Fig. 4 hFE -IC
Fig. 5 VCE(sat) -IC
KST-9026-000
3
.