SI6965DQ

Si6965DQ Vishay Siliconix P-Channel 2.5-V (G-S) Battery Switch PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.035 @ VGS = –4.5 V 0.060 @ VGS = –2.5 V ID (A) "5.0 "3.9 S1 S2 TSSOP-8 D S1 S1 G1 1 2 3 4 Top View D P-Channel MOSFET D P-Channel MOSFET D 8 D S2 S2 G2 G1 G2 Si6965DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –20 "12 "5.0 "4.0 "30 –1.5 1.5 0.96 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t v 10 sec Steady State Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70798 S-56943—Rev. B, 02-Nov-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Typical Maximum 83 Unit _C/W 85 2-1 Si6965DQ Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = –250 mA VDS = 0 V, VG...