Document
Si6875DQ
New Product
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET, Common Drain
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.027 @ VGS = –4.5 V –20 20 0.036 @ VGS = –2.5 V 0.052 @ VGS = –1.8 V
ID (A)
–6.4 –5.5 –4.6
S1
S2
TSSOP-8
D1 S1 S1 G1 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2
Si6875DQ
7 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
–20 "8 –6.4 –5.1 –30 –1.6 1.78 1.14
Steady State
Unit
V
–5.2 –4.1 A
–1.08 1.19 0.76 –55 to 150 _C W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71230 S-01235—Rev. A, 12-Jun-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
55 85 35
Maximum
70 105 45
Unit
_C/W
2-1
Si6875DQ
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –16 V, VGS = 0 V VDS = –16 V, VGS = 0 V, TJ = 70_C VDS = –5 V, VGS = –4.5 V VGS = –4.5 V, ID = –6.4 A
a D i S Drain-Source On-State O S Resistance R i
Symbol
Test Condition
Min
Typ
Max
Unit
–0.45 "100 –1 –25 –20 0.022 0.029 0.042 19 –0.70 –1.1 0.027 0.036 0.052
V nA mA A W W S V
rDS(on)
VGS = –2.5 V, ID = –5.5 A VGS = –1.8 V, ID = –4.6 A
Forward
Transconductancea
gfs VSD
VDS = –5 V, ID = –6.4 A IS = –1.6 A, VGS = 0 V
Diode Forward Voltagea
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –1.6 A, di/dt = 100 A/ms VDD = –10 10 V V, , RL = 10 W ID ^ –1 1 A, A VGEN = –4.5 45V V, RG = 6 W VDS = –10 10 V V, VGS = –4.5 4 5 V, V ID = –6.4 64A 26 4.6 5.9 26 27 170 75 30 40 40 250 110 50 ns 36 nC C
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30 VGS = 5 thru 2.5 V 24 2V I D – Drain Current (A) 18 I D – Drain Current (A) 18 125_C 12 24 30 TC = –55_C 25_C
Transfer Characteristics
12 1.5 V 6 0.5, 1 V 0 0 3 6 9 12
6
0 0 0.5 1.0 1.5 2.0 2.5
VDS – Drain-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600
VGS – Gate-to-Source Voltage (V) Document Number: 71230 S-01235—Rev. A, 12-Jun-00
2-2
Si6875DQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10 r DS(on) – On-Resistance ( W ) 4000 3500 C – Capacitance (pF) 0.08 VGS = 1.8 V 0.06 3000 2500 2000 1500 1000 0.02 VGS = 4.5 V 0 0 6 12 18 24 30 500 0 0 Crss 4 8 12 16 20 Coss Ciss
Vishay Siliconix
Capacitance
0.04
VGS = 2.5 V
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
Gate Charge
5 V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 6.4 A 4 1.6
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 6.4 A 1.4
3
r DS(on) – On-Resistance (W) (Normalized) 12 18 24 30
1.2
2
1.0
1
0.8
0 0 6 Qg – Total Gate Charge (nC)
0.6 –50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30 0.08
On-Resistance vs. Gate-to-Source Voltage
I S – Source Current (A)
TJ = 150_C 10
r DS(on) – On-Resistance ( W )
0.06 ID = 6.4 A 0.04
TJ = 25_C
0.02
1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD – Source-to-Drain Voltage (V)
0 0 2 4 6 8 VGS – Gate-to-Source Voltage (V)
Document Number: 71230 S-01235—Rev. A, 12-Jun-00
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2-3
Si6875DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.5 0.4 80 V GS(th) Variance (V) 0.3 Power (W) ID = 250 mA 0.2 0.1 0.0 20 –0.1 –0.2 –50 0 0.001 60 100
Single Pulse Power, Junction-to-Ambient
40
–25
0
25
50
75
100
125
150
0.01
0.1 Time (sec)
1
10
TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2
Notes:
0.1 0.1 0.05
t1 PDM
0.02
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 85_C/W
t1 t2
Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec)
3. TJM – TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10
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2-4
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