SI6544BDQ

Si6544BDQ Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 0.032 at VGS = 10 V 0.046 at VGS = 4.5 V P-Channel - 30 0.043 at VGS = - 10 V 0.073 at VGS = - 4.5 V ID (A) 4.3 3.7 - 3.8 - 2.8 FEATURES Halogen-free TrenchFET® Power MOSFETS RoHS COMPLIANT D1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Top View 8 D2 7 S2 6 S2 5 G2 Ordering Information: Si6544BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) G1 S1 N-Channel MOSFET G2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel 10 s Steady State P-Channel 10 s Steady State Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 4.3 3.5 3.7 - 3.8 - 3.8 3.0 - 3.0 - 2.6 Pulsed Drain Current IDM 20 - 20 Continuous Source Current (Diode Conduction)a IS 1.0 0.7 - 1.0 - 0.7 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.14 0.73 0.83 0.53 1.14 0.73 0.83 0.53 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t ≤ 10 s Steady State Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Symbol RthJA RthJF Typical 88 120 65 Maximum 110 150 80 Unit °C/W Document Number: 72244 S-81056-Rev. B, 12-May-08 www.vishay.com 1 Si6544BDQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unl...