SI6463BDQ

P-Channel 1.8 V (G-S) MOSFET Si6463BDQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.015 at VGS = - 4.5 V - 20 0.020 at VGS = - 2.5 V 0.027 at VGS = - 1.8 V ID (A) - 7.4 - 6.3 - 5.5 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC S* TSSOP-8 D1 S2 S3 G4 Si6463BDQ 8D 7S 6S 5D Top View Ordering Information: Si6463BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) G * Source Pins 2, 3, 6 and 7 must be tied common. D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 7.4 - 5.9 - 6.2 - 4.9 Pulsed Drain Current (10 µs Pulse Width) IDM - 30 Continuous Source Current (Diode Conduction)a IS - 1.35 - 0.95 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.5 1.05 1.0 0.67 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes: a. Surface mounted on 1" x 1" FR4 board. t  10 s Steady State Steady State Symbol RthJA RthJF Typical 65 100 46 Maximum 83 120 56 Unit °C/W Document Number: 72018 S10-2138-Rev. C, 20-Sep-10 www.vishay.com 1 Si6463BDQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions ...