SI5515DC

Complementary 20 V (D-S) MOSFET Si5515DC Vishay Siliconix PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) 0.040 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.052 at VGS = 1.8 V 0.086 at VGS = - 4.5 V 0.121 at VGS = - 2.5 V 0.171 at VGS = - 1.8 V ID (A) 5.9 5.6 5.2 - 4.1 - 3.4 - 2.9 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs Ultra Low RDS(on) and Excellent Power Handling In Compact Footprint Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switching for Portable Devices 1206-8 ChipFET® 1 S1 D1 G1 D1 S2 D2 G2 D2 Marking Code EC XXX Lot Traceability and Date Code Bottom View Part # Code Ordering Information: Si5515DC-T1-E3 (Lead (Pb)-free) Si5515DC-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel P-Channel Parameter Symbol 5 s Steady State 5 s Steady State Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID 5.9 4.2 4.4 - 4.1 - 3 3.1 - 2.9 - 2.2 Pulsed Drain Current IDM 20 - 15 Continuous Source Current (Diode Conduction)a IS 1.8 0.9 - 1.8 - 0.9 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 2.1 1.1 1.1 0.6 2.1 1.1 1.1 0.6 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature)b, c 260 Unit V A W °C THE...