SI5475DC

P-Channel 12-V (D-S) MOSFET Si5475DC Vishay Siliconix PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) 0.031 at VGS = - 4.5 V 0.041 at VGS = - 2.5 V 0.054 at VGS = - 1.8 V ID (A) - 7.6 - 6.6 - 5.8 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs 1.8 V Rated Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET ® 1 D D D D D DG S 1.8 mm Marking Code BF XX Lot Traceability and Date Code Part # Code 3.0 mm Bottom View Ordering Information: Si5475DC-T1-E3 (Lead (Pb)-free) Si5475DC-T1-GE3 (Lead (Pb)-free and Halogen-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID - 7.6 - 3.5 - 5.5 - 3.9 Pulsed Drain Current IDM ± 20 Continuous Source Currenta IS - 2.1 - 1.1 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 2.5 1.3 1.3 0.7 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature)b, c 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) t≤5s Steady State Steady State RthJA RthJF 40 80 15 50 95 °C/W 20 Notes: a. Surface mounted on 1" x 1" FR4 board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead termi...