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SI4982DY Dataheets PDF



Part Number SI4982DY
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Dual N-Channel MOSFET
Datasheet SI4982DY DatasheetSI4982DY Datasheet (PDF)

Si4982DY Vishay Siliconix Dual N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.150 at VGS = 10 V 0.180 at VGS = 6 V ID (A) 2.6 2.4 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4982DY-T1-E3 (Lead (Pb)-free) Si4982DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATIN.

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Si4982DY Vishay Siliconix Dual N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.150 at VGS = 10 V 0.180 at VGS = 6 V ID (A) 2.6 2.4 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4982DY-T1-E3 (Lead (Pb)-free) Si4982DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)a IS Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 100 ± 20 2.6 2.1 20 1.7 2.0 1.3 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Symbol RthJA Limit 62.5 Unit V A W °C Unit °C/W Document Number: 70748 S09-0870-Rev. C, 18-May-09 www.vishay.com 1 Si4982DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb Dynamica Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Qg Qgs Qgd Rg td(on) tr td(off) tf trr VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 55 °C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 2.6 A VGS = 6 V, ID = 2.4 A VDS = 15 V, ID = 2.6 A IS = 1.7 A, VGS = 0 V VDS = 50 V, VGS = 10 V, ID = 2.6 A VDD = 50 V, RL = 50 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω IF = 1.7 A, dI/dt = 100 A/µs Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Min. 2 15 Typ.a Max. ± 100 1 20 0.130 0.140 11 0.150 0.180 1.2 Unit V nA µA A Ω S V 15 30 2.7 nC 4.0 1 4.4 Ω 10 20 10 20 30 60 ns 10 20 60 90 Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70748 S09-0870-Rev. C, 18-May-09 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 Si4982DY Vishay Siliconix I D - Drain Current (A) 16 12 8 4 0 0 0.25 VGS = 10 V thru 6 V 5V 3V 4V 123 VDS - Drain-to-Source Voltage (V) Output Chara.


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