Document
Si4982DY
Vishay Siliconix
Dual N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
100 0.150 at VGS = 10 V 0.180 at VGS = 6 V
ID (A) 2.6 2.4
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
SO-8
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information: Si4982DY-T1-E3 (Lead (Pb)-free) Si4982DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)a
IS
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit 100 ± 20 2.6 2.1 20 1.7 2.0 1.3 - 55 to 150
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s.
Symbol RthJA
Limit 62.5
Unit V
A
W °C
Unit °C/W
Document Number: 70748 S09-0870-Rev. C, 18-May-09
www.vishay.com 1
Si4982DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb Diode Forward Voltageb Dynamica Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time
VGS(th) IGSS
IDSS
ID(on)
RDS(on)
gfs VSD
Qg Qgs Qgd Rg td(on)
tr td(off)
tf trr
VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 2.6 A VGS = 6 V, ID = 2.4 A VDS = 15 V, ID = 2.6 A IS = 1.7 A, VGS = 0 V
VDS = 50 V, VGS = 10 V, ID = 2.6 A
VDD = 50 V, RL = 50 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
IF = 1.7 A, dI/dt = 100 A/µs
Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Min. 2
15
Typ.a
Max.
± 100 1 20
0.130 0.140
11
0.150 0.180
1.2
Unit
V nA µA A Ω S V
15 30 2.7 nC 4.0 1 4.4 Ω 10 20 10 20 30 60 ns 10 20 60 90
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
www.vishay.com 2
Document Number: 70748 S09-0870-Rev. C, 18-May-09
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 20
Si4982DY
Vishay Siliconix
I D - Drain Current (A)
16 12
8 4 0
0
0.25
VGS = 10 V thru 6 V
5V
3V 4V
123
VDS - Drain-to-Source Voltage (V) Output Chara.