SI4955DY

New Product Si4955DY Vishay Siliconix Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 - 30 0.054 at VGS = - 10 V 0.100 at VGS = - 4.5 V Channel-2 - 20 0.027 at VGS = - 4.5 V 0.035 at VGS = - 2.5 V 0.048 at VGS = - 1.8 V ID (A) - 5.0 - 3.7 - 7.0 - 6.2 - 5.2 FEATURES TrenchFET® Power MOSFETs Low Gate Drive (2.5 V) Capability For Channel 2 APPLICATIONS Game Station - Load Switch RoHS COMPLIANT S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4955DY-T1-E3 (Lead (Pb)-free) S1 G1 D1 P-Channel MOSFET S2 G2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel-1 10 sec Steady State Channel-2 10 sec Steady State Drain-Source Voltage VDS - 30 - 20 Gate-Source Voltage VGS ± 20 ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 5.0 - 4.0 - 3.8 - 3.0 - 7.0 - 5.6 - 5.3 - 4.2 Pulsed Drain Current IDM - 20 Continuous Source Current (Diode Conduction)a IS - 1.7 - 0.9 - 1.7 - 0.9 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.0 1.3 1.1 0.7 2 1.3 1.1 0.7 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. t ≤ 10 sec Steady State Steady State Symbol RthJA RthJF Document Number: 72241 S-61006-Rev. C,...