Dual N-Channel MOSFET
Dual N-Channel 40-V (D-S) MOSFET
Si4942DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
40 0.021 at VGS = 10...
Description
Dual N-Channel 40-V (D-S) MOSFET
Si4942DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
40 0.021 at VGS = 10 V 0.028 at VGS = 4.5 V
ID (A) 7.4 6.4
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D1 6 D2 5 D2
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Low Power Synchronous Rectifier Automotive 12 V Systems
D1
D2
G1 G2
Top View
Ordering Information: Si4942DY-T1-E3 (Lead (Pb)-free) Si4942DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
7.4 5.3 5.8 4.3
Pulsed Drain Current
IDM 30
Avalanche Current
L = 0.1 mH
IAS
25
Continuous Source Current (Diode Conduction)a
IS 1.8 0.9
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
2.1 1.3
1.1 0.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s Steady State Steady State
Symbol RthJA RthJF
Typical 50 90 28
Maximum 60 110 34
Unit °C/W
Document Number: 71887 S09-0704-Rev. D, 27-Apr-09
www.vishay.com 1
Si4942DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unle...
Similar Datasheet