SI4925BDY

Si4925BDY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 FEATURES ID (A) - 7.1 - 5.5 rDS(on) (W) 0.025 @ VGS = - 10 V 0.041 @ VGS = - 4.5 V D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS D Load Switches - Notebook PCs - Desktop PCs - Game Stations S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4925BDY Si4925BDY-T1 (with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State - 30 "20 Unit V - 7.1 - 5.7 - 40 - 1.7 2.0 1.3 - 55 to 150 - 5.3 - 4.3 A - 0.9 1.1 0.7 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 ” x 1” FR4 Board. Document Number: 72001 S-31989—Rev. B, 13-Oct-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 50 85 30 Maximum 62.5 110 40 Unit _C/W 1 Si4925BDY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State ...