SI4921DY

New Product Dual P-Channel 30-V (D-S) MOSFET Si4921DY Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 30 0.025 at VGS = - 10 V 0.042 at VGS = - 4.5 V ID (A) - 7.3 - 5.6 SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4921DY-T1 Si4921DY-T1-E3 (Lead (Pb)-free) FEATURES TrenchFET® Power MOSFET Advanced High Cell Density Process APPLICATIONS Load Switches - Notebook PCs - Desktop PCs - Game Stations Battery Switch S1 S2 Pb-free Available RoHS* COMPLIANT G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 sec Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 7.3 - 5.8 - 5.5 - 4.4 Pulsed Drain Current IDM - 30 Continuous Source Current (Diode Conduction)a IS - 1.7 - 0.9 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.0 1.3 1.1 0.7 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. t ≤ 10 sec Steady State Steady State Symbol RthJA RthJF * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72109 S-61006-Rev. B, 12-Jun-06 Typical 46 80 24 Maximum 62.5 110 32 Unit °C/W www.vishay.com 1 Si4921DY Vishay Silico...