SI4882DY

Si4882DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0105 @ VGS = 10 V 0.0205 @ VGS = 4.5 V ID (A) "11 "8 D D D D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D N-Channel MOSFET G S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70 _C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 "25 "11 "9 "50 2.3 2.5 1.6 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Foot Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70878 S-00271—Rev. A, 26-Apr-99 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State RthJF 19 25 Symbol RthJA Typical 35 68 Maximum 50 80 Unit _C/W 2-1 Si4882DY Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VG...