SI4864DY

N-Channel 20-V (D-S) MOSFET Si4864DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.0035 at VGS = 4.5 V 0.0047 at VGS = 2.5 V ID (A) 25 20 FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFETs: 2.5 V Rated Low 3.5 mΩ RDS(on) PWM (Qgd and Rg) Optimized APPLICATIONS Low-Side MOSFET in Synchronous Buck DC/DC Converters in Servers and Routers D S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4864DY-T1-E3 (Lead (Pb)-free) Si4864DY-T1-GE3 (Lead (Pb)-free and Halogen-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 25 20 17 13 Pulsed Drain Current (10 µs Pulse Width) IDM 60 Continuous Source Current (Diode Conduction)a IS 2.9 1.3 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.5 2.2 1.6 1 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 29 67 13 Maximum 35 80 16 Unit °C/W Document Number: 71449 S09-0221-Rev. C, 09-Feb-09 www.vishay.com 1 Si4864DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Tes...