SI4850EY

Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 10 V 60 0.031 at VGS = 4.5 V ID (A) 8.5 7.2 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs 175 °C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4850EY-T1-E3 (Lead (Pb)-free) Si4850EY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage Gate-Source Voltage VDS VGS 60 ± 20 Continuous Drain Current (TJ = 175 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID IDM 8.5 6.0 7.1 5.0 40 Avalanche Current IAS 15 Single Pulse Avalanche Energy Maximum Power Dissipationa TA = 25 °C TA = 70 °C EAS PD 11 3.3 1.7 2.3 1.2 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 36 75 17 Maximum 45 90 20 Unit °C/W Document Number: 71146 S09-1341-Rev. F, 13-Jul-09 www.vishay.com 1 Si4850EY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate Threshold V...