Document
N-Channel 12-V (D-S) MOSFET
Si4838DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
12 0.003 at VGS = 4.5 V 0.004 at VGS = 2.5 V
ID (A) 25 20
FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFETs: 2.5 V Rated • 100 % Rg Tested
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
Top View
Ordering Information: Si4838DY-T1-E3 (Lead (Pb)-free) Si4838DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
VDS 12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
25 20
17 13
Pulsed Drain Current (10 µs Pulse Width)
IDM 60
Continuous Source Current (Diode Conduction)a
IS 2.9 1.3
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
3.5 2.2
1.6 1
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s Steady State Steady State
Symbol RthJA RthJF
Typical 29 67 13
Maximum 35 80 16
Unit °C/W
Document Number: 71359 S09-0221-Rev. D, 09-Feb-09
www.vishay.com 1
Si4838DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = 9.6 V, VGS = 0 V VDS = 9.6 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 4.5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 25 A VGS = 2.5 V, ID = 20 A
Forward Transconductancea
gfs
VDS = 6 V, ID = 25 A
Diode Forward Voltagea
VSD IS = 2.9 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 6 V, VGS = 4.5 V, ID = 25 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time Turn-Off Delay Time
tr td(off)
VDD = 6 V, RL = 6 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 2.9 A, dI/dt = 100 A/µs
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
0.6 ± 100 1 5
30 0.0024 0.003 0.0031 0.004 80 0.75 1.1
Unit
V nA µA A Ω S V
40 60
6.7 nC
9.2
1.0 1.7 2.9
Ω
40 60
40 60
140 210
ns
70 100
50 80
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
VGS = 5 V thru 2 V 50
60 50
I D - Drain Curre.