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SI4838DY Dataheets PDF



Part Number SI4838DY
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description N-Channel MOSFET
Datasheet SI4838DY DatasheetSI4838DY Datasheet (PDF)

N-Channel 12-V (D-S) MOSFET Si4838DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 12 0.003 at VGS = 4.5 V 0.004 at VGS = 2.5 V ID (A) 25 20 FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 2.5 V Rated • 100 % Rg Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4838DY-T1-E3 (Lead (Pb)-free) Si4838DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise .

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N-Channel 12-V (D-S) MOSFET Si4838DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 12 0.003 at VGS = 4.5 V 0.004 at VGS = 2.5 V ID (A) 25 20 FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 2.5 V Rated • 100 % Rg Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4838DY-T1-E3 (Lead (Pb)-free) Si4838DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 25 20 17 13 Pulsed Drain Current (10 µs Pulse Width) IDM 60 Continuous Source Current (Diode Conduction)a IS 2.9 1.3 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.5 2.2 1.6 1 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 29 67 13 Maximum 35 80 16 Unit °C/W Document Number: 71359 S09-0221-Rev. D, 09-Feb-09 www.vishay.com 1 Si4838DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS VDS = 9.6 V, VGS = 0 V VDS = 9.6 V, VGS = 0 V, TJ = 55 °C On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 25 A VGS = 2.5 V, ID = 20 A Forward Transconductancea gfs VDS = 6 V, ID = 25 A Diode Forward Voltagea VSD IS = 2.9 A, VGS = 0 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = 6 V, VGS = 4.5 V, ID = 25 A Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) VDD = 6 V, RL = 6 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω Fall Time tf Source-Drain Reverse Recovery Time trr IF = 2.9 A, dI/dt = 100 A/µs Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Min. Typ. Max. 0.6 ± 100 1 5 30 0.0024 0.003 0.0031 0.004 80 0.75 1.1 Unit V nA µA A Ω S V 40 60 6.7 nC 9.2 1.0 1.7 2.9 Ω 40 60 40 60 140 210 ns 70 100 50 80 Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 VGS = 5 V thru 2 V 50 60 50 I D - Drain Curre.


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