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SI4501ADY

Vishay Siliconix

Complementary MOSFET

Si4501ADY Vishay Siliconix Complementary (N- and P-Channel) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30...


Vishay Siliconix

SI4501ADY

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Si4501ADY Vishay Siliconix Complementary (N- and P-Channel) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 0.018 at VGS = 10 V 0.027 at VGS = 4.5 V P-Channel -8 0.042 at VGS = - 4.5 V 0.060 at VGS = - 2.5 V ID (A) 8.8 7.0 - 5.7 - 4.8 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC APPLICATIONS Level Shift Load Switch S2 S1 1 G1 2 S2 3 G2 4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4501ADY-T1-E3 (Lead (Pb)-free) Si4501ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) G2 D G1 S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel P-Channel Parameter Symbol 10 s Steady State 10 s Steady State Drain-Source Voltage VDS 30 -8 Gate-Source Voltage VGS ± 20 ±8 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID 8.8 7 6.3 - 5.7 - 4.1 5.2 - 4.5 - 3.3 Pulsed Drain Current IDM 30 - 30 Continuous Source Current...




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