Complementary MOSFET
Si4501ADY
Vishay Siliconix
Complementary (N- and P-Channel) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
30...
Description
Si4501ADY
Vishay Siliconix
Complementary (N- and P-Channel) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
30
0.018 at VGS = 10 V 0.027 at VGS = 4.5 V
P-Channel
-8
0.042 at VGS = - 4.5 V 0.060 at VGS = - 2.5 V
ID (A) 8.8 7.0 - 5.7 - 4.8
FEATURES Halogen-free According to IEC 61249-2-21
Definition TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Level Shift Load Switch
S2
S1 1 G1 2 S2 3 G2 4
SO-8
8D 7D 6D 5D
Top View
Ordering Information: Si4501ADY-T1-E3 (Lead (Pb)-free) Si4501ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
G2 D
G1 S1
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Symbol
10 s Steady State 10 s Steady State
Drain-Source Voltage
VDS 30
-8
Gate-Source Voltage
VGS
± 20
±8
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C TA = 70 °C
ID
8.8 7
6.3
- 5.7
- 4.1
5.2
- 4.5
- 3.3
Pulsed Drain Current
IDM 30
- 30
Continuous Source Current...
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