SI4486EY

N-Channel 100-V (D-S) MOSFET Si4486EY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.025 at VGS = 10 V 0.028 at VGS = 6.0 V ID (A) 7.9 7.5 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs 175 °C Maximum Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D Ordering Information: Si4486EY-T1-E3 (Lead (Pb)-free) Si4486EY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)a TA = 25 °C TA = 85 °C ID 7.9 5.4 6.1 4.2 Pulsed Drain Current IDM 40 Avalanche Current Repetitive Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.1 mH IAR EAR 30 45 Continuous Source Current (Diode Conduction)a IS 3.1 1.5 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 3.8 2.3 1.8 1.1 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 Unit V A mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 33 70 17 Maximum 40 85 21 Unit °C/W Document Number: 71234 S09-1341-Rev. E, 13-Jul-09 www.vishay.com 1 Si4486EY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwis...