Document
Si4480EY
Vishay Siliconix
N-Channel 80-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
80
rDS(on) (W)
0.035 @ VGS = 10 V 0.040 @ VGS = 6.0 V
ID (A)
6.2 5.8
D
SO-8
S S S G 1 2 3 4 Top View S Ordering Information: Si4480EY Si4480EY-T1 (with Tape and Reel) N-Channel MOSFET 8 7 6 5 D D D D G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS
Symbol
VDS VGS
Limit
80 "20 6.2 5.2 40 2.5 3 2.1 - 55 to 175
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Lead Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. t v 10 sec. Document Number: 71060 S-03951—Rev. B, 26-May-03 www.vishay.com Steady State Steady State RthJA RthJL
Symbol
Typical
40 85 20
Maximum
50 100 24
Unit
_C/W
2-1
Si4480EY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currena Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 55_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 6.2 A VGS = 6.0 V, ID = 5.8 A VDS = 15 V, ID = 6.2 A IS = 2.1 A, VGS = 0 V 20 0.026 0.030 25 1.2 0.035 0.040 2 "100 1 20 V nA mA A W S V
Symbol
Test Condition
Min
Typb
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.1 A, di/dt = 100 A/ms VDD = 40 V, RL = 30 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 1.5 12.5 12.5 52 22 50 VDS = 40 V, VGS = 10 V, ID = 6.2 A 30 9 5.6 4.0 25 25 80 40 80 ns W 50 nC
Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40 VGS = 10 thru 6 V 32 I D - Drain Current (A) I D - Drain Current (A) 32 40
Transfer Characteristics
24
5V
24
16
16 TC = 125_C 8 25_C - 55_C 0
8 4V 0 0.0 0.8 1.6 2.4 3.2 4.0
0
1
2
3
4
5
6
VDS - Drain-to-Source Voltage (V) www.vishay.com
VGS - Gate-to-Source Voltage (V) Document Number: 71060 S-03951—Rev. B, 26-May-03
2-2
Si4480EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05 2500
Capacitance
r DS(on)- On-Resistance ( W )
0.04 C - Capacitance (pF) VGS = 6 V 0.03 VGS = 10 V 0.02
2000
Ciss
1500
1000 Coss
0.01
500 Crss
0.00 0 10 20 ID - Drain Current (A) 30 40
0 0 10 20 30 40 50 60
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 V GS - Gate-to-Source Voltage (V) VDS = 40 V ID = 6.0 A 8 2.4 2.2 r DS(on) - On-Resistance (W ) (Normalized) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 0 6 12 18 24 30 Qg - Total Gate Charge (nC) 0.6 - 50
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 6 A
6
4
2
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
40 0.06
On-Resistance vs. Gate-to-Source Voltage
r DS(on)- On-Resistance ( W )
0.05 ID = 6.0 A 0.04
I S - Source Current (A)
TJ = 175_C 10
0.03
TJ = 25_C
0.02
0.01
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71060 S-03951—Rev. B, 26-May-03
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2-3
Si4480EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.5 50
Single Pulse Power
40 0.0 V GS(th) Variance (V) ID = 250 mA Power (W) 30
- 0.5
20
- 1.0 10
- 1.5 - 50
- 25
0
25
50
75
100
125
150
175
0 10 -2
10 -1
1 Time (sec)
10
100
600
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05 0.02
t1 t2 1. Duty Cycle, D = t1 t2 PDM
2. Per Unit Base = RthJA = 85_C/W
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse
Normalized Effective Transient Thermal Impedance
0.001
0.0001 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 100
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Document Number: 71060 S-03951—Rev. B, 26-May-03
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