SI4465DY

P-Channel 1.8-V (G-S) MOSFET Si4465DY Vishay Siliconix PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) 0.009 @ VGS = –4.5 V 0.011 @ VGS = –2.5 V 0.016 @ VGS = –1.8 V ID (A) –14 –12 –10 S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4465DY-T1 Si4465DY-T1–E3 (Lead (Pb)–free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS –8 "8 Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg –14 –11 –40 –2.1 2.5 1.6 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board. b. t v10 sec. Document Number: 70830 S-51472—Rev. C, 01-Aug-05 t v 10 sec Steady State Symbol RthJA Typical 80 Maximum 50 Unit _C/W www.vishay.com 1 Si4465DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –8 V, VGS = 0 V VDS = –8 V, VGS = 0 V, TJ = 55_C VDS w –5 V, VGS =...