SI4453DY

P-Channel 12-V (D-S) MOSFET Si4453DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0065 at VGS = - 4.5 V - 12 0.00775 at VGS = - 2.5 V 0.01025 at VGS = - 1.8 V ID (A) - 14 - 13 - 12 SO-8 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch Battery Switch S S1 S2 S3 G4 Top View 8D 7D 6D 5D G Ordering Information: Si4453DY-T1-E3 (Lead (Pb)-free) Si4453DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 14 - 11.5 - 10 -8 Pulsed Drain Current IDM - 50 Continuous Source Current (Diode Conduction)a IS - 2.7 - 1.36 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.0 1.5 1.9 0.95 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 33 70 16 Maximum 42 84 21 Unit °C/W Document Number: 72175 S09-0705-Rev. C, 27-Apr-09 www.vishay.com 1 Si4453DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static ...