SI4434DY

N-Channel 250-V (D-S) MOSFET Si4434DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RrDS(on) (Ω) 250 0.155 at VGS = 10 V 0.162 at VGS = 6.0 V ID (A) 3.0 2.9 FEATURES Halogen-free According to IEC 61249-2-21 Definition PWM-Optimized TrenchFET® Power MOSFET 100 % Rg Tested Avalanche Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D APPLICATIONS Primary Side Switch In: - Telecom Power Supplies - Distributed Power Architectures - Miniature Power Modules D G Top View Ordering Information: Si4434DY-T1-E3 (Lead (Pb)-free) Si4434DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 250 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 3.0 2.1 2.4 1.7 Pulsed Drain Current IDM 30 Continuous Source Current (Diode Conduction)a IS 2.6 1.3 Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS 13 8.4 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.1 1.56 2.0 1.0 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 33 65 17 Maximum 40 80 21 Unit °C/W Document Number: 72562 S09-0322-Rev. D, 02-Mar-09 www.vishay.com 1 Si44...