SI4431ADY

P-Channel 30-V (D-S) MOSFET Si4431ADY Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.030 @ VGS = –10 V –30 0.052 @ VGS = –4.5 V ID (A) –7.2 –5.5 FEATURES D TrenchFETr Power MOSFET SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4431ADY-T1 Si4431ADY-T1—E3 (Lead (Pb)-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage VDS –30 VGS "20 Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg –7.2 –5.3 –5.8 –4.2 –30 –2.1 –1.3 2.5 1.35 1.6 0.87 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71803 S-51472—Rev. D, 01-Aug-05 t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 35 75 17 Maximum 50 92 25 Unit _C/W www.vishay.com 1 Si4431ADY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS...