SI4390DY

Si4390DY Vishay Siliconix N-Channel Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0095 at VGS = 10 V 0.0135 at VGS = 4.5 V ID (A) 12.5 10.5 FEATURES Halogen-free According to IEC 61249-2-21 Definition Extremely Low Qgd for Switching Losses TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 8D 7D 6D 5D APPLICATIONS High-Side DC/DC Conversion - Notebook - Server D G Top View Ordering Information: Si4390DY-T1-E3 (Lead (Pb)-free) Si4390DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 10 s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS PD TJ, Tstg 30 ± 20 12.5 8.5 10 6.8 20 2.7 1.3 3.0 1.4 1.9 0.9 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. t  10 s Steady State Steady State Symbol RthJA RthJF Typical 32 68 15 Maximum 42 90 20 Unit °C/W Document Number: 72150 S11-0209-Rev. F, 14-Feb-11 www.vishay.com 1 Si4390DY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Condi...