SI4366DY

New Product N-Channel 30-V (D-S) MOSFET Si4366DY Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.0048 at VGS = 10 V 30 0.0055 at VGS = 4.5 V ID (A) 20 19 SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4366DY-T1 Si4366DY-T1-E3 (Lead (Pb)-free) FEATURES TrenchFET® Power MOSFET Optimized for “Low Side” Synchronous Rectifier Operation 100 % RG Tested APPLICATIONS DC/DC Converters Synchronous Rectifiers D Available RoHS* COMPLIANT G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 sec Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 20 15 13 10 Pulsed Drain Current (10 µs Pulse Width) IDM 60 Continuous Source Current (Diode Conduction)a IS 2.9 1.3 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.5 2.2 1.6 1 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. t ≤ 10 sec Steady State Steady State Symbol RthJA RthJF Typical 29 67 13 Maximum 35 80 16 Unit °C/W * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71852 S-70315-Rev. C, 12-Feb-07 www.vishay.com 1 Si4366DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Sy...