SI3905DV

Si3905DV New Product Vishay Siliconix Dual P-Channel 8-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.125 @ VGS = –4.5 V –8 8 0.175 @ VGS = –2.5 V 0.265 @ VGS = –1.8 V ID (A) "2.5 "2.0 "1.7 S1 S2 TSOP-6 Top View G1 1 6 D1 G1 3 mm S2 2 5 S1 G2 G2 3 4 D2 2.85 mm D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Diode Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg Symbol VDS VGS Limit –8 "8 "2.5 "2.0 "7 –1.05 1.15 Unit V A W 0.73 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Lead Notes a. Surface Mounted on FR4 Board. b. t v 5 sec Document Number: 70973 S-61840—Rev. A, 13-Sep-99 www.vishay.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJL Typical 93 130 75 Maximum 110 150 90 Unit _C/W 2-1 Si3905DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –6.4 V, VGS = 0 V VDS = –6.4 V, VGS = 0 V, TJ = 55_C VDS = v–5 V, VGS = –4.5 V VGS = –4.5 V, ID = –2.5 A a ...