SI3900DV

Si3900DV Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.125 @ VGS = 4.5 V 0.200 @ VGS = 2.5 V ID (A) 2.4 1.8 D1 D2 TSOP-6 Top View G1 1 6 D1 3 mm S2 2 5 S1 G1 G2 G2 3 4 D2 2.85 mm S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS 5 sec 20 Steady State "12 Unit V 2.4 ID IDM IS PD TJ, Tstg 1.05 1.15 0.59 –55 to 150 1.7 8 2.0 1.4 A 0.75 0.83 0.53 W _C THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71178 S-03511—Rev. B, 16-Apr-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 93 130 75 Maximum 110 150 90 Unit _C/W 1 Si3900DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS...