SI3588DV

Si3588DV New Product Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.080 @ VGS = 4.5 V 0.100 @ VGS = 2.5 V 0.128 @ VGS = 1.8 V 0.145 @ VGS = –4.5 V ID (A) 3.0 2.6 2.3 –2.2 –1.8 –1.5 P-Channel –20 0.200 @ VGS = –2.5 V 0.300 @ VGS = –1.8 V D1 S2 TSOP-6 Top View G1 1 6 D1 G2 3 mm S2 2 5 S1 G1 G2 3 4 D2 2.85 mm S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS 1.05 1.15 0.73 0.75 0.83 0.53 –55 to 150 P-Channel 5 secs Steady State –20 "8 V –2.2 –1.8 "8 –1.05 1.15 0.73 –0.75 0.083 0.53 W _C –0.57 –1.5 A Symbol VDS VGS 5 secs Steady State 20 Unit 3.0 2.3 2.5 2.0 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71332 S-02383—Rev. A, 23-Oct-00 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 93 130 90 Maximum 110 150 90 Unit _C/W 1 Si3588DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = –250...