P-Channel 20-V (D-S) MOSFET
Si3493DV
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.027 @ VGS = −4.5 V −20 0.03...
Description
Si3493DV
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.027 @ VGS = −4.5 V −20 0.035 @ VGS = −2.5 V 0.048 @ VGS = −1.8 V
FEATURES
ID (A)
−7 −6.2 −5.2 21
Qg (Typ)
D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance
APPLICATIONS
D Load Switch D PA Switch D Battery Switch
TSOP-6 Top View
1 3 mm 6 (3) G 2 5
(4) S
3
4 (1, 2, 5, 6) D
2.85 mm
P-Channel MOSFET
Ordering Information: Si3493DV-T1 Si3493DV-T1—E3 (Lead (Pb)-Free) Marking Code: 93xxx
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
Steady State
−20 "8
Unit
V
−7 −3.6 −20 −1.7 2.0 1.0 −55 to 150
−5.3 −3.9 A
−0.9 1.1 0.6 W _C
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71936 S-41796—Rev. C, 04-Oct-04 www.vishay.com t v 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
45 90 25
Maximum
62.5 110 30
Unit
_C/W
1
Si3493DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain ...
Similar Datasheet