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SI3460DV

Vishay Siliconix
Part Number SI3460DV
Manufacturer Vishay Siliconix
Description N-Channel 20-V (D-S) MOSFET
Published Apr 8, 2005
Detailed Description Si3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A) 6.8 6.3 5.7 rDS(on)...
Datasheet PDF File SI3460DV PDF File

SI3460DV
SI3460DV

Overview
Si3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A) 6.
8 6.
3 5.
7 rDS(on) (W) 0.
027 @ VGS = 4.
5 V 0.
032 @ VGS = 2.
5 V 0.
038 @ VGS = 1.
8 V D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View 1 3 mm 6 5 (3) G 3 4 (1, 2, 5, 6) D 2 2.
85 mm (4) S Ordering Information: Si3460DV-T1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VG...


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