SI3435DV

Si3435DV New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.036 @ VGS = - 4.5 V - 12 0.050 @ VGS = - 2.5 V 0.073 @ VGS = - 1.8 V ID (A) - 6.3 - 5.3 - 4.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D P-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID - 4.6 IDM IS - 1.7 2.0 1.0 - 55 to 150 - 20 - 0.9 1.1 0.6 W _C - 3.4 A Symbol VDS VGS 5 secs Steady State - 12 "8 Unit V - 6.3 - 4.8 THERMAL RESISTANCE RATINGS Parameter t v 5 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71318 S-03371—Rev. B, 03-Mar-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 45 90 25 Maximum 62.5 110 30 Unit _C/W 1 Si3435DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 9.6 V, VGS = 0 V VDS = - 9.6 V, VGS = 0 V, TJ = 85_C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID =...