N-channel MOSFET
Si3430DV
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
100
FEATURES
ID (A)
2.4 2.3
rDS(on) (...
Description
Si3430DV
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
100
FEATURES
ID (A)
2.4 2.3
rDS(on) (W)
0.170 @ VGS = 10 V 0.185 @ VGS = 6.0 V
D High-Efficiency PWM Optimized D 100% Rg Tested
TSOP-6 Top View
1 3 mm 6 5 (3) G 3 4
(1, 2, 5, 6) D
2
2.85 mm (4) S Ordering Information: Si3430DV-T1 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy (Duty Cycle v1%) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C L = 0.1 0 1 mH TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IAR EAR IS PD TJ, Tstg
5 secs
100 "20 2.4 1.7 8 6 1.8 1.7 2.0 1.0
Steady State
Unit
V
1.8 1.3 A
mJ 1.0 1.14 0.59 A W _C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71235 S-31725—Rev. B, 18-Aug-03 www.vishay.com t v 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
45 90 25
Maximum
62.5 110 30
Unit
_C/W
1
Si3430DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Di...
Similar Datasheet