SI2328DS

Si2328DS New Product Vishay Siliconix N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) 0.250 @ VGS = 10 V ID (A) 1.5 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2328DS (D8)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C L = 0.1 mH TA= 25_C TA= 70_C Symbol VDS VGS 5 sec 100 "20 1.5 Steady State Unit V 1.15 0.92 6 6 1.8 0.6 mJ A 0.73 0.47 –55 to 150 W _C A ID IDM IAS EAS IS 1.2 1.25 PD TJ, Tstg 0.80 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 71796 S-05372—Rev. A, 25-Dec-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 80 130 45 Maximum 100 170 55 Unit _C/W 1 Si2328DS Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID ...