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SI2321DS Dataheets PDF



Part Number SI2321DS
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description P-Channel MOSFET
Datasheet SI2321DS DatasheetSI2321DS Datasheet (PDF)

P-Channel 20-V (D-S) MOSFET Si2321DS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.057 at VGS = - 4.5 V - 20 0.076 at VGS = - 2.5 V 0.110 at VGS = - 1.8 V ID (A) - 3.3 - 2.8 - 2.3 TO-236 (SOT-23) G1 S2 3D FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETS APPLICATIONS • Load Switch • PA Switch Top View Si2321DS *(D1) * Marking Code Ordering Information: Si2321DS-T1-E3 (Lead (Pb)-free) Si2321DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATIN.

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P-Channel 20-V (D-S) MOSFET Si2321DS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.057 at VGS = - 4.5 V - 20 0.076 at VGS = - 2.5 V 0.110 at VGS = - 1.8 V ID (A) - 3.3 - 2.8 - 2.3 TO-236 (SOT-23) G1 S2 3D FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETS APPLICATIONS • Load Switch • PA Switch Top View Si2321DS *(D1) * Marking Code Ordering Information: Si2321DS-T1-E3 (Lead (Pb)-free) Si2321DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 3.3 - 2.6 - 2.9 - 2.3 Pulsed Drain Current IDM - 12 Continuous Source Current (Diode Conduction)a IS - 0.74 - 0.59 Power Dissipationa TA = 25 °C TA = 70 °C PD 0.89 0.71 0.57 0.45 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 RoHS COMPLIANT Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s. t≤5s Steady State Steady State Symbol RthJA RthJF Typical 115 140 60 For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72210 S-80642-Rev. B, 24-Mar-08 Maximum 140 175 75 Unit °C/W www.vishay.com 1 Si2321DS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 10 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 8 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55 °C VDS ≤ - 5 V, VGS = - 4.5 V Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb RDS(on) gfs VSD VGS = - 4.5 V, ID = - 3.3 A VGS = - 2.5 V, ID = - 2.8 A VGS = - 1.8 V, ID = - 2.3 A VDS = - 5 V, ID = - 3.3 A IS = - 1.6 A, VGS = 0 V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchingb Qg Qgs Qgd Ciss Coss Crss VDS = - 6 V, VGS = - 4.5 V ID ≅ - 3.3 A VDS = - 6 V, VGS = 0 V, f = 1 MHz Turn-On Time Turn-Off Time td(on) tr td(off) tf VDD = - 6 V, RL = 6 Ω ID ≅ - 1.0 A, VGEN = - 4.5 V RG = 6 Ω Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. c. Switching time is essentially independent of operating temperature. Min. Limits Typ. Max. - 20 - 0.40 -6 0.044 0.061 0.084 3 - 0.90 ± 100 -1 - 10 0.057 0.076 0.110 - 1.2 Unit V nA µA A Ω S V 8 13 1.2 2.2 715 170 120 nC pF 15 25 35 55 ns 60 90 40 60 Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at.


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