Document
P-Channel 1.8-V (G-S) MOSFET
Si2311DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.045 at VGS = - 4.5 V - 8 0.072 at VGS = - 2.5 V
0.120 at VGS = - 1.8 V
ID (A) - 3.5 - 2.8 - 2.0
FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET
APPLICATIONS • Load Switch
RoHS
COMPLIANT
TO-236 (SOT-23)
G1 S2
3D
Top View Si2311DS (C1)* * Marking Code
Ordering Information: Si2311DS-T1-E3 (Lead (Pb)-free) Si2311DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5 s Steady State
Drain-Source Voltage
VDS - 8
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C TA = 70 °C
ID
- 3.5 - 2.8
- 3.0 - 2.4
Pulsed Drain Current
IDM - 10
Continuous Source Current (Diode Conduction)a, b
IS
- 0.8
- 0.6
Maximum Power Dissipationa, b
TA = 25 °C TA = 70 °C
PD
0.96 0.71 0.62 0.46
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain)
t≤5s Steady State Steady State
Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature.
Symbol RthJA RthJF
Document Number: 71813 S-80642-Rev. B, 24-Mar-08
Typical 100 140 60
Maximum 130 175 75
Unit °C/W
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Si2311DS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea Diode Forward Voltage Dynamicb
V(BR)DSS VGS(th)
IGSS IDSS
ID(on)
RDS(on)
gfs VSD
VGS = 0 V, ID = - 10 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 8 V VDS = - 6.4 V, VGS = 0 V VDS = - 6.4 V, VGS = 0 V, TJ = 55 °C VDS ≤ - 5 V, VGS = - 4.5 V VDS ≤ - 5 V, VGS = - 2.5 V VGS = - 4.5 V, ID = - 3.5 A VGS = - 2.5 V, ID = - 3 A VGS = - 1.8 V, ID = - 0.7 A VDS = - 5 V, ID = - 3.5 A
IS = - 0.8 A, VGS = 0 V
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchingb
Qg Qgs Qgd Ciss Coss Crss
VDS = - 4 V, VGS = - 4.5 V ID ≅ - 3.5 A
VDS = - 4 V, VGS = 0 V, f = 1 MHz
Turn-On Time Turn-Off Time
td(on) tr
td(off) tf
VDD = - 4 V, RL = 4 Ω ID ≅ - 1.0 A, VGEN = - 4.5 V
RG = 6 Ω
Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. c. Switching time is essentially independent of operating temperature.
Min.
Limits Typ.
Max.
-8 - 0.45
-6 -3
0.036 0.058 0.096
9.0
- 0.8 ± 100
-1 - 10
0.045 0.072 0.120
- 1.2
Unit
V nA µA A
Ω S V
8.5 12 1.5 2.1 970 485 160
nC pF
18 25 45 65
ns 40 60 45 65
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other.