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SI2311DS Dataheets PDF



Part Number SI2311DS
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description P-Channel MOSFET
Datasheet SI2311DS DatasheetSI2311DS Datasheet (PDF)

P-Channel 1.8-V (G-S) MOSFET Si2311DS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.045 at VGS = - 4.5 V - 8 0.072 at VGS = - 2.5 V 0.120 at VGS = - 1.8 V ID (A) - 3.5 - 2.8 - 2.0 FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch RoHS COMPLIANT TO-236 (SOT-23) G1 S2 3D Top View Si2311DS (C1)* * Marking Code Ordering Information: Si2311DS-T1-E3 (Lead (Pb)-free) Si2311DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RAT.

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P-Channel 1.8-V (G-S) MOSFET Si2311DS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.045 at VGS = - 4.5 V - 8 0.072 at VGS = - 2.5 V 0.120 at VGS = - 1.8 V ID (A) - 3.5 - 2.8 - 2.0 FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch RoHS COMPLIANT TO-236 (SOT-23) G1 S2 3D Top View Si2311DS (C1)* * Marking Code Ordering Information: Si2311DS-T1-E3 (Lead (Pb)-free) Si2311DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Drain-Source Voltage VDS - 8 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID - 3.5 - 2.8 - 3.0 - 2.4 Pulsed Drain Current IDM - 10 Continuous Source Current (Diode Conduction)a, b IS - 0.8 - 0.6 Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD 0.96 0.71 0.62 0.46 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) t≤5s Steady State Steady State Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Symbol RthJA RthJF Document Number: 71813 S-80642-Rev. B, 24-Mar-08 Typical 100 140 60 Maximum 130 175 75 Unit °C/W www.vishay.com 1 Si2311DS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VGS = 0 V, ID = - 10 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 8 V VDS = - 6.4 V, VGS = 0 V VDS = - 6.4 V, VGS = 0 V, TJ = 55 °C VDS ≤ - 5 V, VGS = - 4.5 V VDS ≤ - 5 V, VGS = - 2.5 V VGS = - 4.5 V, ID = - 3.5 A VGS = - 2.5 V, ID = - 3 A VGS = - 1.8 V, ID = - 0.7 A VDS = - 5 V, ID = - 3.5 A IS = - 0.8 A, VGS = 0 V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchingb Qg Qgs Qgd Ciss Coss Crss VDS = - 4 V, VGS = - 4.5 V ID ≅ - 3.5 A VDS = - 4 V, VGS = 0 V, f = 1 MHz Turn-On Time Turn-Off Time td(on) tr td(off) tf VDD = - 4 V, RL = 4 Ω ID ≅ - 1.0 A, VGEN = - 4.5 V RG = 6 Ω Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. c. Switching time is essentially independent of operating temperature. Min. Limits Typ. Max. -8 - 0.45 -6 -3 0.036 0.058 0.096 9.0 - 0.8 ± 100 -1 - 10 0.045 0.072 0.120 - 1.2 Unit V nA µA A Ω S V 8.5 12 1.5 2.1 970 485 160 nC pF 18 25 45 65 ns 40 60 45 65 Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other.


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