SI2306DS

Si2306DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 3.5 2.8 rDS(on) (W) 0.057 @ VGS = 10 V 0.094 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 D S 2 Top View Si2306DS (A6)* *Marking Code Ordering Information: Si2306DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 "20 3.5 2.8 16 1.25 1.25 0.80 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Notes a. Surface Mounted on FR4 Board. b. t v 5 sec. Document Number: 70827 S-31873—Rev. C, 15-Sep-03 www.vishay.com t v 5 sec Steady State Symbol RthJA Typical 130 Maximum 100 Unit _C/W 1 Si2306DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS ID(on) D( ) VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 4.5 V, VGS = 10 V VDS w 4.5 V, VGS = 4.5 V VGS = 10 V, ID = 3.5 A VGS = 4.5 V, ID = 2.8 ...